NTE6402 programmable unijunction transistor (put) description: the NTE6402 is a 3?terminal silicon planer passivated pnp device available in the standard plastic low cost to98 and to92 type packages. the terminals are designated as anode, anode gate, and cathode. this device has been characterized as a programmable unijunction transistor (put), offering many advantages over conventional unijunction transistors. the designer can select r 1 and r 2 to program unijunction characteristics such as intrinsic standoff ratio, interbase resistance, peak?point emitter current, and valley?point current to meet his particular needs. put?s are specifically charactrized for long interval timers and other applications requiring low leak- age and low peak point current. put?s similar types have been characterized applications: scr trigger pulse and timing circuits oscillators sensing circuits sweep circits absolute maximum ratings: (t a = +25 c unless otherwise specified) gate?cathode forward voltage +40v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate?cathode reverse voltage ?5v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate?anode reverse voltage +40v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . anode?cathode voltage 40v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dc anode current (note 1) 150ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak anode, recurrent forward current pulse width = 100 s, duty cycle = 1% 1a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulse width = 20 s, duty cycle = 1% 2a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak anode, non?recurrent forward current (10 s) 20ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . capacitive discharge energy (note 2) 250 j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total average power (note 1) 300mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating ambient temperature range (note 1) ?50 to +100 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . note 1. derate currents and powers 1%/ c above 25 c. note 2. e = 1/2 cv 2 capacitor discharge energy with no current limiting.
electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit peak current i p v s = 10v, r g = 1m ? ? ? 2 a v s = 10v, r g = 10k ? ? ? 5 a offset voltage v t v s = 10v, r g = 1m ? 0.2 ? 1.6 v v s = 10v, r g = 10k ? 0.2 ? 0.6 v valley current i v v s = 10v, r g = 1m ? ? ? 50 a v s = 10v, r g = 10k ? 70 ? ? a v s = 10v, r g = 200 ? 1.5 ? ? ma anode gate ? anode leakage current i gao v s = 40v, t a = +25 c ? ? 10 na v s = 40v, t a = +75 c ? ? 100 na gate ? cathode leakage current i gks v s = 40v, anode ? cathode short ? ? 100 na forward voltage v f i f = 50ma ? ? 1.5 v pulse output voltage v o 6 ? ? v pulse voltage rate of rise t r ? ? 80 ns a g k .190 (4.82) min .018 (0.45) dia max .245 (6.23) max .500 (12.7) min .100 (2.54) .200 (5.08) max .065 (1.65) .140 (3.55) max .135 (3.45) min seating plane .021 (.445) dia max .210 (5.33) max .500 (12.7) min .050 (1.27) .165 (4.2) max .105 (2.67) max .100 (2.54) .105 (2.67) max .205 (5.2) max a g k to92 to98
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